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APTM120H65FT3G
Full bridge MOSFET Power Module
VDSS = 1200V RDSon = 650m typ @ Tj = 25C ID = 16A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 8TM Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Kelvin source for easy drive Internal thermistor for temperature monitoring High level of integration
* * * *
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS Compliant
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Max ratings 1200 16 12 105 30 780 390 14 Unit V
August, 2009 1-5 APTM120H65FT3G - Rev 0
A V m W A
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM120H65FT3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS = 1200V VGS = 0V Tj = 125C VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 250 1000 780 5 100 Unit A m V nA
3
650 4
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 14A Resistive switching @ 25C VGS = 15V VBus = 800V ID = 14A RG = 2.2 Min Typ 7736 715 92 300 50 140 50 31 170 48 ns nC Max Unit pF
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 14A IS = - 14A VR = 100V diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ Max 16 12 1.1 25 335 640 Unit A V V/ns ns C
1.72 4.67
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 14A di/dt 1000A/s VDD 800V Tj 125C
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2-5
APTM120H65FT3G - Rev 0
August, 2009
APTM120H65FT3G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 4000 -40 -40 -40 2.5
Typ
Max 0.32 150 125 100 4.7 110
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3-5
APTM120H65FT3G - Rev 0
August, 2009
17
28
APTM120H65FT3G
Typical Performance Curve
Low Voltage Output Characteristics 40
VGS=10V
Low Voltage Output Characteristics 25
TJ=125C
ID, Drain Current (A)
ID, Drain Current (A)
20
VGS=6, 7, 8 &9V
30
TJ=25C
15
5V
20
TJ=125C
10 5 0
4.5V
10
0 0 5 10 15 VDS, Drain to Source Voltage (V) Normalized RDS(on) vs. Temperature 3 ID, Drain Current (A) 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150
VGS=10V ID=14A
20
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V) Transfert Characteristics 20
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle TJ=125C
RDSon, Drain to Source ON resistance
15
10
TJ=25C
5
0 0 1 2 3 4 5 6 TJ, Junction Temperature (C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 10000
VDS=240V VDS=600V Ciss
12 VGS, Gate to Source Voltage 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC)
VDS=960V ID=14A TJ=25C
C, Capacitance (pF)
1000
Coss
100
Crss
10
1 VDS, Drain to Source Voltage (V)
August, 2009 APTM120H65FT3G - Rev 0
0
50
100
150
200
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4-5
APTM120H65FT3G
Drain Current vs Source to Drain Voltage ISD, Reverse Drain Current (A) 60 50 40
TJ=125C
30 20 10
TJ=25C
0 0 0.2 0.4 0.6 0.8 1 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35
Thermal Impedance (C/W)
0.3 0.25 0.2 0.15
0.9 0.7 0.5 0.3
0.1 0.05
0.1 0.05 Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTM120H65FT3G - Rev 0
Microsemi reserves the right to change, without notice, the specifications and information contained herein
August, 2009

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